Integrated circuit incorporating decoders disposed beneath...

Details Integrated circuit incorporating decoders disposed beneath... Integrated circuit incorporating decoders disposed beneath...

2011-07-12

2011-07-12

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Interconnection arrangements

C365S230060, C365S066000, C365S072000, C365S130000

Reexamination Certificate

active

07978492

ABSTRACT:
A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

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