Integrated circuit including vertical diode

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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C257S589000, C257SE29139

Reexamination Certificate

active

07745812

ABSTRACT:
An integrated circuit includes a vertical diode defined by crossed line lithography.

REFERENCES:
patent: 6838692 (2005-01-01), Lung
patent: 6969633 (2005-11-01), Dennison
patent: 6995446 (2006-02-01), Karpov et al.
patent: 2003/0001230 (2003-01-01), Lowrey
patent: 2005/0128785 (2005-06-01), Kang
patent: 2005/0194620 (2005-09-01), Dennison et al.
patent: 2006/0034116 (2006-02-01), Lam et al.
patent: 2006/0151771 (2006-07-01), Asano et al.
patent: 2006/0186483 (2006-08-01), Cho et al.
patent: 2006/0284237 (2006-12-01), Park et al.
“Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology”, J. H. Oh, et al., IEEE, 2006 (1 pg.).
“Highly Reliable 50 nm Contact Cell Technology for 256Mb PRAM”, S. J. Ahn, et al., Samsung Electronics Co., Ltd, (2 pgs.).
“Ovonic Unified Memory—A High-performance Nonvolatile Memory Technology for Stand Alone Memory and Embedded Applications”, Manzur Gill, et al., Intel Corporation (4 pgs.).

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