Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-06-21
2010-11-23
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S004000, C257SE45002
Reexamination Certificate
active
07838860
ABSTRACT:
An integrated circuit includes a vertical diode, a first electrode coupled to the vertical diode, and a resistivity changing material coupled to the first electrode. The integrated circuit includes a second electrode coupled to the resistivity changing material and a spacer having a first sidewall contacting a first sidewall of the first electrode and a sidewall of the resistivity changing material.
REFERENCES:
patent: 6501111 (2002-12-01), Lowrey
patent: 6838692 (2005-01-01), Lung
patent: 6969633 (2005-11-01), Dennison
patent: 6995446 (2006-02-01), Karpov et al.
patent: 7214958 (2007-05-01), Happ
patent: 7217945 (2007-05-01), Dennison et al.
patent: 7598112 (2009-10-01), Park et al.
patent: 2003/0001230 (2003-01-01), Lowrey
patent: 2005/0128785 (2005-06-01), Kang
patent: 2006/0034116 (2006-02-01), Lam et al.
patent: 2006/0151771 (2006-07-01), Asano et al.
patent: 2006/0186483 (2006-08-01), Cho et al.
patent: 2006/0284237 (2006-12-01), Park et al.
patent: 2008/0185571 (2008-08-01), Happ et al.
patent: 2008/0303013 (2008-12-01), Happ et al.
“Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology”, J. H. Oh, et al., IEEE, 2006 (1 pg.).
“Highly Reliable 50 nm Contact Cell Technology for 256Mb PRAM”, S. J. Ahn, et al., Samsung Electronics Co., Ltd, (2 pgs.).
“Ovonic Unified Memory—A High-performance Nonvolatile Memory Technology for Stand Alone Memory and Embedded Applications”, Manzur Gill, et al., Intel Corporation (4 pgs.).
Happ Thomas
Philipp Jan Boris
Coats & Bennett P.L.L.C.
Huynh Andy
Qimonda AG
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