Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-04-26
2005-04-26
Nguyen, Van Thu (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S064000, C257S074000, C257S798000
Reexamination Certificate
active
06885031
ABSTRACT:
A method of forming a single crystal semiconductor film on a non-crystalline surface is described. In accordance with this method, a template layer incorporating an ordered array of nucleation sites is deposited on the non-crystalline surface, and the single crystal semiconductor film is formed on the non-crystalline surface from the ordered array of nucleation sites. An integrated circuit incorporating one or more single crystal semiconductor layers formed by this method also is described.
REFERENCES:
patent: 5733369 (1998-03-01), Yonehara et al.
patent: 5759708 (1998-06-01), Tarasevich et al.
patent: 6017390 (2000-01-01), Charych et al.
patent: 6103019 (2000-08-01), Saxena
patent: 6110278 (2000-08-01), Saxena
Hewlett--Packard Development Company, L.P.
Menz Doug
Nguyen Van Thu
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