Integrated circuit including silicide region to inhibit...

Details Integrated circuit including silicide region to inhibit... Integrated circuit including silicide region to inhibit...

2011-01-04

2011-01-04

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With metal contact alloyed to elemental semiconductor type...

In bipolar transistor structure

C257S112000, C257S197000, C257S288000, C257S377000, C257S382000, C257S384000, C257S454000, C257S474000, C257S486000, C257S511000

Reexamination Certificate

active

07863610

ABSTRACT:
An integrated circuit is disclosed. One embodiment includes a first diode, a second diode, and a semiconductor line coupled to the first diode and the second diode. The line includes a first silicide region between the first diode and the second diode.

REFERENCES:
patent: 6274908 (2001-08-01), Yamaguchi et al.
patent: 6972211 (2005-12-01), Hsu et al.
patent: 7193267 (2007-03-01), Hsu et al.
patent: 2008/0315171 (2008-12-01), Happ et al.
patent: 2009/0052230 (2009-02-01), Rajendran et al.
patent: 2009/0132781 (2009-05-01), Schnepper

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