Integrated circuit including semiconductor power device and...

Details Integrated circuit including semiconductor power device and... Integrated circuit including semiconductor power device and...

2005-06-14

2005-06-14

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Including additional component in same, non-isolated structure

C257S048000, C361S093800, C361S103000

Reexamination Certificate

active

06906399

ABSTRACT:
An integrated circuit (10) includes a thermal sensing device (20) and a power-switching device (12) such as an IGBT. The power device (12) is fabricated in a conventional manner on a semiconductor substrate, and the thermal sensing device (20) is fabricated on an electrical insulation layer (74) formed over the substrate. The thermal sensing device (20) may be provided in the form of a number of series-connected polysilicon diodes (D1-D3) positioned adjacent to the power device (12) such that the operating temperature of the thermal sensing device (20) is near that of the power device (12). In response to an input current IC, the thermal sensing device (20) produces an output voltage (VD) that is substantially linear with surface die temperature, and which reacts rapidly to changes in surface die temperature. The thermal sensing device (20) is completely electrically isolated from the power device, thereby eliminating any electrical interaction therebetween.

REFERENCES:
patent: 4760434 (1988-07-01), Tsuzuki et al.
patent: 5049961 (1991-09-01), Zommer et al.
patent: 5237481 (1993-08-01), Soo et al.
patent: 5427975 (1995-06-01), Sparks et al.
patent: 5723916 (1998-03-01), Disney et al.
patent: 6472251 (2002-10-01), Myer et al.
patent: 6619556 (2003-09-01), Snider et al.

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