Integrated circuit including resistivity changing material...

Details Integrated circuit including resistivity changing material... Integrated circuit including resistivity changing material...

2007-06-28

2010-10-12

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S004000, C257S005000, C257S052000, C257S154000, C257SE29080, C257SE29008, C257SE31029, C257SE45002, C365S163000

Reexamination Certificate

active

07812333

ABSTRACT:
An integrated circuit includes a first electrode and a first resistivity changing material coupled to the first electrode. The first resistivity changing material has a planarized surface. The integrated circuit includes a second resistivity changing material contacting the planarized surface of the first resistivity changing material and a second electrode coupled to the second resistivity changing material. A cross-sectional width of the first resistivity changing material is less than a cross-sectional width of the second resistivity changing material.

REFERENCES:
patent: 6507061 (2003-01-01), Hudgens et al.
patent: 6674115 (2004-01-01), Hudgens et al.
patent: 6927410 (2005-08-01), Chen
patent: 6998289 (2006-02-01), Hudgens et al.
patent: 7531378 (2009-05-01), Peters
patent: 2005/0112896 (2005-05-01), Hamann et al.
patent: 2006/0046509 (2006-03-01), Gwan-Hyeob
patent: 2007/0097739 (2007-05-01), Happ et al.
“Full Integration and Reliability Evaluation of Phase-Change RAM Based on .24um-CMOS Technologies”, Y.N. Hwang, et al., Symposium on VLSI Technology Digest of Technical Papers, 2003 (2 pgs.).
“Highly Manufacturable High Density Phase Change Memory of 64Mb and Beyond”, S.J. Ahn, et al., IEEE 2004 (4 pgs.).
“A 0.1 um 1.8V 256Mb 66 MHz Synchronous Burst PRAM”, Sangbeom Kang, et al., IEEE 2006 (3 pgs.).
“OUM—A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications”, Stefan Lai, et al., Intel Corporation, 2001 (4 pgs).

Affiliated with

Also associated with

Rating

Integrated circuit including resistivity changing material... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit including resistivity changing material..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit including resistivity changing material... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4223942