Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2011-06-21
2011-06-21
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S500000, C257SE21532, C257SE21536, C257SE21540
Reexamination Certificate
active
07964933
ABSTRACT:
A method of fabricating a semiconductor integrated circuit including a power diode includes providing a semiconductor substrate of first conductivity type, fabricating a integrated circuit such as a CMOS transistor circuit in a first region of the substrate, and fabricating a power diode in a second region in the semiconductor substrate. Dielectric material is formed between the first region and the second regions thereby providing electrical isolation between the integrated circuit in the first region and the power diode in the second region. The power diode can comprise a plurality of MOS source/drain elements and associated gate elements all connected together by one electrode of the diode, and a semiconductor layer in the second region can function as another source/drain of the power diode.
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Chang Paul
Chern Geeng-Chuan
Ghosh Prognyan
Hsueh Wayne Y. W.
Rodov Vladimir
Andújar Leonardo
Courtney Barbara B.
Courtney IP Law
Diodes Inc.
Harriston William
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