Integrated circuit including memory element doped with...

Details Integrated circuit including memory element doped with... Integrated circuit including memory element doped with...

2011-08-23

2011-08-23

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S257000, C257S268000, C257SE21647, C257SE21669, C257SE23145, C257SE23149, C257SE45002

Reexamination Certificate

active

08003971

ABSTRACT:
An integrated circuit includes a first electrode, a second electrode, and a damascene structured memory element coupled to the first electrode and the second electrode. The memory element has a height and a width. The height is greater than or equal to the width. The memory element includes resistance changing material doped with dielectric material.

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