Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With contact or metallization configuration to reduce...
Reexamination Certificate
2007-06-07
2009-06-09
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With contact or metallization configuration to reduce...
C257S508000, C257S528000, C257S536000, C257S537000, C257S390000, C257S907000, C257S910000, C365S063000, C365S072000, C365S103000, C365S104000, C365S105000
Reexamination Certificate
active
07545019
ABSTRACT:
An integrated circuit includes a logic portion including M conductive layers, a memory portion including N conductive layers, and at least one common top conductive layer over the logic portion and the memory portion. M is greater than N.
REFERENCES:
patent: 5714768 (1998-02-01), Ovshinsky et al.
patent: 6200848 (2001-03-01), Lin et al.
patent: 6333221 (2001-12-01), Lee
patent: 7038261 (2006-05-01), Horii
patent: 7053431 (2006-05-01), Ogiwara
patent: 2003/0168715 (2003-09-01), Bae
patent: 2004/0021168 (2004-02-01), Himeno et al.
patent: 2005/0226041 (2005-10-01), Nejad et al.
patent: 2005/0265082 (2005-12-01), Campbell et al.
patent: 102005001253 (2006-07-01), None
“OUM—180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications”, Stefan Lai, et al., Intel Corporation (4 pgs.).
“Current Status of the Phase Change Memory and its Future”, Stefan Lai, Intel Corporation, IEEE 2003 (4 pgs.).
“Phase-Change Chalcogenide Nonvolatile RAM Completely Based on CMOS Technology”, Y.N. Hwang, et al., IEEE 2003 (3 pgs.).
“OUM, Ovonic Unified Memory”, ECD Ovonics, Research Report, http://www.ovonics.com/PDFs/Elec—Memory—Research—Report/OUM.pdf, 1999 (80 pgs.).
“A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM”, H. Horii, et al., Samsung Electronics Co., Ltd, (2 pgs.).
“Full Integration and Reliability Evaluation of Phase-Change RAM Based on .24um-CMOS Technologies”, Y.N. Hwang, et al., Symposium on VLSI Technology Digest of Technical Papers, 2003 (2 pgs.).
“Switching Current Scaling and Reliability Evaluation in PRAM”, C.W. Jeong, et al., Samsung Electronics Co., Ltd., (2 pgs.).
“Highly Scalable On-axis Confined Cell Structure for High Denisty PRAM beyond 256Mb”, S.L. Cho, et al., Symposium of VLSI Technology Digest of Technical Papers, 2005 (2 pgs.).
“Novel uTrench Phase-Change Memory Cell for Embedded and Stand-Alone Non-Volatile Memory Applications”, F. Pellizzer, et al., Symposium of VLSI Technology Digest of Technical Papers, 2004 (2 pgs.).
“Highly Manufacturable High Density Phase Change Memory of 64Mb and Beyond”, S.J. Ahn, et al., Samsung Electronics Co., Ltd., (4 pgs.).
A 0.1um 1.8V 256Mb 66MHz Synchronous Burst PRAM., Sangeom Kang, et al., ISSCC 2006 (3 pgs.).
Happ Thomas
Nirschl Thomas
Philipp Jan Boris
Dicke Billig & Czaja, PLLC
Pham Thanh V
Qimonda North America Corp.
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