Integrated circuit including inverted dielectric isolation

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

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Details

257508, 257347, 257773, H01L 2906, H01L 2941

Patent

active

060842849

ABSTRACT:
A method of semiconductor fabrication includes the steps of forming a dielectric layer on a first surface of a semiconductor wafer having a plurality of laterally distributed semiconductor devices selectively interconnected on the first surface and bonding a support substrate to the first surface of the semiconductor wafer on the dielectric layer to form a composite structure. A portion of the semiconductor wafer from a second surface which is opposite the first surface is removed and the second surface of the semiconductor wafer is processed. Processing of the second surface optionally includes the formation of isolation trenches electrically isolating the laterally distributed semiconductor devices.

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