Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1999-10-26
2000-07-04
Fourson, George
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257508, 257347, 257773, H01L 2906, H01L 2941
Patent
active
060842849
ABSTRACT:
A method of semiconductor fabrication includes the steps of forming a dielectric layer on a first surface of a semiconductor wafer having a plurality of laterally distributed semiconductor devices selectively interconnected on the first surface and bonding a support substrate to the first surface of the semiconductor wafer on the dielectric layer to form a composite structure. A portion of the semiconductor wafer from a second surface which is opposite the first surface is removed and the second surface of the semiconductor wafer is processed. Processing of the second surface optionally includes the formation of isolation trenches electrically isolating the laterally distributed semiconductor devices.
REFERENCES:
patent: 5402989 (1995-04-01), Takasu
patent: 5479048 (1995-12-01), Yallup et al.
patent: 5742075 (1998-04-01), Burns et al.
patent: 5889302 (1999-03-01), Liu
patent: 5936280 (1999-08-01), Liu
patent: 5939755 (1999-08-01), Takeuchi et al.
patent: 5942781 (1999-08-01), Burr et al.
patent: 6013936 (2000-01-01), Colt, Jr.
Fourson George
Koestner Ken J.
LandOfFree
Integrated circuit including inverted dielectric isolation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit including inverted dielectric isolation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit including inverted dielectric isolation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1488940