Integrated circuit including high voltage devices and low...

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – In integrated structure

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S379000, C257S392000, C257S398000, C257S484000

Reexamination Certificate

active

07019377

ABSTRACT:
An integrated circuit includes a high voltage Schottky barrier diode and a low voltage device. The Schottky barrier diode includes a lightly doped p-well as guard ring while the low voltage devices are built using standard, more heavily doped p-wells. By using a process including a lightly doped p-well and a standard p-well, high voltage and low voltage devices can be integrated onto the same integrated circuit. In one embodiment, the lightly doped p-well and the standard p-well are formed by performing ion implantation using a first dose to form the lightly doped p-well, masking the lightly doped p-well, and performing ion implantation using a second dose to form the standard p-well. The second dose is the difference of the dopant concentrations of the lightly doped p-well and the standard p-well. In other embodiments, other high voltage devices can also be built by incorporating the lightly doped p-well structure.

REFERENCES:
patent: 3335341 (1967-08-01), Hung Chang Lin
patent: 4697332 (1987-10-01), Joy et al.
patent: 4979001 (1990-12-01), Alter
patent: 5047820 (1991-09-01), Garnett
patent: 5355014 (1994-10-01), Rao et al.
patent: 5539237 (1996-07-01), Todd et al.
patent: 5556796 (1996-09-01), Garnett et al.
patent: 5614755 (1997-03-01), Hutter et al.
patent: 5698457 (1997-12-01), Noguchi
patent: 5750414 (1998-05-01), Whitney
patent: 6096589 (2000-08-01), Lee et al.
patent: 6207510 (2001-03-01), Abeln et al.
patent: 6306700 (2001-10-01), Yang
patent: 6376870 (2002-04-01), Carpenter, Jr. et al.
patent: 6410377 (2002-06-01), Hwang et al.
R. A. Zettler et al., “p-n Juntion-Schottky Barrier Hybrid Diode,” IEEE Transactions On Electron Devices, Jan. 1969, pp. 58-63.
A. Rusu et al., “The Metal-Overlap Laterally-Diffused (Mold) Schottky Diode,” Solid State Electronics, 1977, vol. 20, pp. 499-506.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated circuit including high voltage devices and low... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit including high voltage devices and low..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit including high voltage devices and low... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3543207

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.