Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – In integrated structure
Reexamination Certificate
2006-03-28
2006-03-28
Munson, Gene M. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
In integrated structure
C257S379000, C257S392000, C257S398000, C257S484000
Reexamination Certificate
active
07019377
ABSTRACT:
An integrated circuit includes a high voltage Schottky barrier diode and a low voltage device. The Schottky barrier diode includes a lightly doped p-well as guard ring while the low voltage devices are built using standard, more heavily doped p-wells. By using a process including a lightly doped p-well and a standard p-well, high voltage and low voltage devices can be integrated onto the same integrated circuit. In one embodiment, the lightly doped p-well and the standard p-well are formed by performing ion implantation using a first dose to form the lightly doped p-well, masking the lightly doped p-well, and performing ion implantation using a second dose to form the standard p-well. The second dose is the difference of the dopant concentrations of the lightly doped p-well and the standard p-well. In other embodiments, other high voltage devices can also be built by incorporating the lightly doped p-well structure.
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Cook Carmen C.
Micrel Inc.
Munson Gene M.
Patent Law Group LLP
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