Integrated circuit including force-filled resistivity...

Details Integrated circuit including force-filled resistivity... Integrated circuit including force-filled resistivity...

2011-01-04

2011-01-04

Nguyen, Kimberly D (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C438S102000

Reexamination Certificate

active

07863593

ABSTRACT:
An integrated circuit includes a first electrode, a second electrode, and force-filled resistivity changing material electrically coupled to the first electrode and the second electrode.

REFERENCES:
patent: 4177475 (1979-12-01), Holmberg
patent: 5508212 (1996-04-01), Wang et al.
patent: 5920788 (1999-07-01), Reinberg
patent: 6589865 (2003-07-01), Dixit et al.
patent: 6764894 (2004-07-01), Lowrey
patent: 6878618 (2005-04-01), Lowrey et al.
patent: 6949464 (2005-09-01), Doan
patent: 6961258 (2005-11-01), Lowrey
patent: 6974773 (2005-12-01), Thakur et al.
patent: 7005666 (2006-02-01), Dennison
patent: 7049623 (2006-05-01), Lowrey
patent: 7190607 (2007-03-01), Cho et al.
patent: 7214632 (2007-05-01), Chiang
patent: 7224065 (2007-05-01), Doan
patent: 7511984 (2009-03-01), Liu
patent: 7663135 (2010-02-01), Lung
patent: 2003/0041452 (2003-03-01), Sinha
patent: 2004/0113137 (2004-06-01), Lowrey
patent: 2005/0018526 (2005-01-01), Lee
patent: 2005/0167645 (2005-08-01), Kim et al.
patent: 2005/0281073 (2005-12-01), Cho et al.
patent: 2006/0040485 (2006-02-01), Lee et al.
patent: 2006/0113573 (2006-06-01), Cheong et al.
patent: 2007/0082469 (2007-04-01), Peters
S.J. Ahn, et al., “Highly Manufacturable High Density Phase Change Memory of 64 Mb and Beyond”, IEEE, 2004 (4 pgs.).
G.A. Dixit, et al., “A Novel High Pressure Low Temperature Aluminum Plug Technology for Sub-0.5um Contact/Via Geometries”, IEEE, 1994, (5 pgs.).
Stefan Lai, “Current Status of the Phase Change Memory and its Future”, IEEE, 2003 (4 pgs.).
Stefan Lai, et al., “OUM—A 180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications”, Intel Corporation, (4 pgs.).
“Highly Scalable Phase Change Memory with CVD GeSbTe for Sub 50nm Generation”, J.I. Lee, et al., Symposium on VLSI Technology Digest of Technical Papers, 2007 (2 pgs.).

Affiliated with

Also associated with

Rating

Integrated circuit including force-filled resistivity... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit including force-filled resistivity..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit including force-filled resistivity... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2659338