Integrated circuit including doped semiconductor line having...

Details Integrated circuit including doped semiconductor line having... Integrated circuit including doped semiconductor line having...

2007-10-31

2011-12-27

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S750000, C257S421000, C257SE21495, C438S652000, C438S102000

Reexamination Certificate

active

08084759

ABSTRACT:
An integrated circuit includes an array of memory cells and a doped semiconductor line formed in a semiconductor substrate. The doped semiconductor line is coupled to a row of memory cells. The integrated circuit includes conductive cladding contacting the doped semiconductor line.

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“Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology”, J.H. Oh, et al., IEEE, 2006 (4 pgs.).
“Ultra-Shallow Junction-Formation by Gas Immersion Laser Doping (GILD)”, M. Hernandez, et al. (1 pg.).
“Ultra-Shallow Junction-Formation by Gas Immersion Laser Doping (GILD)”, M. Hernandez, et al. (1 pg.), Apr. 1, 2004.

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