Integrated circuit including an inductor, active layers with...

Details Integrated circuit including an inductor, active layers with... Integrated circuit including an inductor, active layers with...

2005-02-01

2005-02-01

Brewster, William M. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S501000, C257S531000

Reexamination Certificate

active

06849913

ABSTRACT:
A semiconductor substrate made of P−type or P−−type silicon having a thickness of approximately 700 μm and a resistivity of 10 Ω·cm to 1000 Ω·cm is provided, a BOX layer with a thickness of 0.2 μm to 10 μm is provided on the semiconductor substrate and a p−type SOI layer is provided on this BOX layer. A first insulating film, which makes contact with the BOX layer, is locally buried in this p−type SOI layer and a CMOS is formed in a region of the p−type SOI layer wherein the above-described first insulating film is not provided. A second insulating film is provided above the first insulating film and over the CMOS, so as to cover the CMOS, and an inductor is provided on the region of this second insulating film corresponding to the first insulating film.

REFERENCES:
patent: 6452259 (2002-09-01), Akiyama
patent: 20020110989 (2002-08-01), Yamaguchi et al.
patent: 10-321802 (1998-12-01), None
patent: 11-274412 (1999-10-01), None

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