Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2011-06-28
2011-06-28
Matthews, Colleen A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257SE29257
Reexamination Certificate
active
07968919
ABSTRACT:
A charge compensation component having a drift path between two electrodes, an electrode and a counterelectrode, and methods for producing the same. The drift path has drift zones of a first conduction type and charge compensation zones of a complementary conduction type with respect to the first conduction type. A drift path layer doping comprising the volume integral of the doping locations of a horizontal drift path layer of the vertically extending drift path including the drift zone regions and charge compensation zone regions arranged in the drift path layer is greater in the vicinity of the electrodes than in the direction of the center of the drift path.
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Mauder Anton
Sedlmaier Stefan
Willmeroth Armin
Dicke, Billig & Czaja P.L.L.C.
Infineon Technologies Austria AG
Matthews Colleen A
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