Integrated circuit in complementary circuit technology comprisin

Details Integrated circuit in complementary circuit technology comprisin Integrated circuit in complementary circuit technology comprisin

1989-02-23

1991-09-03

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

3073032, 357 236, 357 42, H03K 3013, H03K 1716, H01L 2710, H01L 2704

Patent

active

050457160

ABSTRACT:
An integrated circuit in complementary circuit technology comprises a substrate bias voltage generator which reverse biases the substrate, into which tubs of opposite conductivity are inserted. The source regions of the field effect transistors arranged in the substrate lie at ground potential. In order to avoid "latch-up" effects, the output of the substrate bias voltage generator is connected by way of an electronic switch to a circuit point lying at ground potential, whereby the switch is driven via the output of the substrate bias voltage generator.

REFERENCES:
patent: 3845331 (1974-10-01), Luscher
patent: 4463270 (1984-07-01), Gordon
patent: 4473758 (1984-09-01), Huntington
patent: 4556204 (1985-12-01), Dewitt
patent: 4622573 (1986-11-01), Bakeman et al.
patent: 4705966 (1987-11-01), Van Zanten
patent: 4710647 (1987-12-01), Young
patent: 4791316 (1988-12-01), Winnerl et al.
patent: 4791317 (1988-12-01), Winnerl et al.
patent: 4798974 (1989-01-01), Reczek et al.
"Voltage Regulator Circuit for CMOS Substrate Voltage Generator", IBM Tech. Discl. Bull., vol. 28, No. 3, pp. 1287-1288, Aug. 1985.

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