Integrated circuit (IC) with a two-terminal diode device to prot

Details Integrated circuit (IC) with a two-terminal diode device to prot Integrated circuit (IC) with a two-terminal diode device to prot

1994-12-23

1995-12-19

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Avalanche diode

With means to limit area of breakdown

257603, H01L 2990

Patent

active

054770785

ABSTRACT:
An ESD protective clamp device comprised of a two-terminal diode formed in an isolated chip cell. The lower part of this chip cell region contains a buried layer of silicon with P-type dopant, and the upper part is an epitaxial layer also with P-type dopant. An annular (ring-shaped) anode plug segment is formed at the outer reaches of the epitaxial layer with P+ doping. At the interior central region is an N-type plug circular in horizontal cross-section and concentric with the annular plug. This central plug serves as the cathode. Electrical connections are made to anode and cathode to provide interconnection with an IC circuit with a MOM capacitor to be protected.

REFERENCES:
patent: 4724471 (1988-02-01), Leuschner
patent: 5276350 (1994-01-01), Merrill et al.
patent: 5298788 (1994-03-01), Moreau
patent: 5414295 (1995-05-01), LeRoux et al.

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