Integrated circuit having resistive memory cells

Details Integrated circuit having resistive memory cells Integrated circuit having resistive memory cells

2006-02-07

2009-10-13

Nhu, David (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S296000, C257S192000, C257S200000, C257SE21267, C257SE21645, C257SE21665

Reexamination Certificate

active

07601995

ABSTRACT:
A memory includes an array of memory cells, each memory cell including resistive material, a first insulation material laterally surrounding the resistive material of each memory cell, and a heat spreader between the memory cells to thermally isolate each memory cell.

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