Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1993-12-13
1995-02-21
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257640, 257684, 257698, 257773, 257774, H01L 2934, H01L 2302, H01L 2312
Patent
active
053919157
ABSTRACT:
A semiconductor device wherein a coating film which is made of a polyimide resin or a polyimide isoindoloquinazolinedione resin and which is at least 10 .mu.m thick is disposed on at least an active region of a semiconductor substrate, and the resultant semiconductor substrate is encapsulated in a ceramic package. The semiconductor device has troubles relieved conspicuously, the troubles being ascribable to alpha-rays which come flying from impurities contained in the material of the package.
REFERENCES:
patent: 3597269 (1971-08-01), Chang et al.
patent: 3767492 (1973-10-01), MacRae et al.
patent: 3771218 (1973-11-01), Langdon
patent: 3853496 (1974-12-01), Kim
patent: 3985597 (1976-10-01), Zielinski
patent: 4001870 (1977-01-01), Saiki et al.
patent: 4001871 (1977-01-01), Tsunemitsu
patent: 4017866 (1977-04-01), Tomono et al.
patent: 4039371 (1977-08-01), Brunner et al.
patent: 4040083 (1977-08-01), Saiki et al.
patent: 4926238 (1990-05-01), Mukai et al.
Harada Seiki
Mukai Kiichiro
Saiki Atsushi
Hatachi, Ltd.
Ngo Ngan V.
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