Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-09-29
1996-01-02
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257532, H01L 2900
Patent
active
054811317
ABSTRACT:
An integrated circuit is formed from a first layer of conductive material (30) which is separated from a second layer of conductive material (39) by a layer of dielectric material (36). The first layer of conductive material (30) is patterned to form a first plate (32, 59) of a capacitor (22, 50, 62, 72). An electrical interconnect (33, 63) is formed within the first plate (32, 59), respectively. A via (37) is formed in the layer of dielectric material (36). A second layer of conductive material (39) is patterned to form a second plate (42, 56, 66, 76) of the capacitor (22, 50, 62, 72) and a planar spiral inductor (21, 51, 61, 71). The planar spiral inductor (21, 51, 61, 71) is surrounded by the second plate (42, 56, 66, 76) of the capacitor (22, 50, 62, 72).
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Patterson Howard W.
Seely Warren L.
Staudinger Joseph
Bowers Courtney A.
Crane Sara W.
Dover Rennie William
Motorola Inc.
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