Integrated circuit having memory cells and method of...

Details Integrated circuit having memory cells and method of... Integrated circuit having memory cells and method of...

2011-03-01

2011-03-01

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

C257S331000, C257SE29262, C365S148000

Reexamination Certificate

active

07898006

ABSTRACT:
An integrated circuit having memory cells and a method of manufacture is disclosed. One embodiment provides a switching active volume and a selection transistor coupled in series between a first electrode and a second electrode. The selection transistor is a vertical transistor for at least partially guiding a substantially vertical current flow. The second electrode includes a buried diffused ground plate formed in a substrate. A metal-containing region at least partially contacting the buried diffused ground plate is provided, the metal-containing region at least extending below the selection transistor.

REFERENCES:
patent: 2008/0205118 (2008-08-01), Gruening-von Schwerin et al.
patent: 102006040238 (2008-03-01), None
patent: 102006051137 (2008-05-01), None

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