Integrated circuit having laser-alterable metallization layer

Details Integrated circuit having laser-alterable metallization layer Integrated circuit having laser-alterable metallization layer

1989-01-27

1991-12-03

James, Andrew J.

Fishing, trapping, and vermin destroying

437192, 357 73, 357 68, 357 65, H01L 21268, H01L 2182

Patent

active

050703927

ABSTRACT:
An integrated circuit and a method of altering such an integrated circuit (e.g., during final testing of the circuit) are such that the method can be used to program a circuit, wire around defective portions of a circuit, or otherwise permanently alter a circuit by employing a directed energy source such as a laser to sever electrical paths in an upper layer of metallization in an integrated circuit. The integrated circuit comprises a laminated upper metallization layer, the upper layer(s) of which laminate are removed from the laser-alterable lower layer at selected locations in the metallization layer to provide laser-alteration sites in the circuit. In a preferred embodiment, the upper metallization layer comprises a two-layer laminate including an upper, relatively thick layer of an aluminum/silicon alloy and a lower, relatively thin layer of titanium nitride.

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IBM TDB, "Tungsten-on-Conducting Nitride Composite Films", vol. 31, No. 3, Aug. 88, pp. 477-478.

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