Active solid-state devices (e.g. – transistors – solid-state diode – With shielding – With means to shield device contained in housing or package...
Reexamination Certificate
2011-05-24
2011-05-24
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
With means to shield device contained in housing or package...
C257S659000, C257S699000, C257S790000, C257SE23124
Reexamination Certificate
active
07948065
ABSTRACT:
A system and method is disclosed for providing an integrated circuit that has increased radiation hardness and reliability. A device active area of an integrated circuit is provided and a layer of radiation resistant material is applied to the device active area of the integrated circuit. In one advantageous embodiment the radiation resistant material is silicon carbide. In another advantageous embodiment a passivation layer is placed between the device active area and the layer of radiation resistant material. The integrated circuit of the present invention exhibits minimal sensitivity to (1) enhanced low dose rate sensitivity (ELDRS) effects of radiation, and (2) pre-irradiation elevated temperature stress (PETS) effects of radiation.
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Le Dung A.
National Semiconductor Corporation
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