Integrated circuit having improved contact region

Details Integrated circuit having improved contact region Integrated circuit having improved contact region

1987-01-22

1989-05-16

Munson, Gene M.

357 54, 357 59, 357 71, H01L 2978, H01L 2934, H01L 2904, H01L 2962

Patent

active

048314250

ABSTRACT:
Method of manufacturing a semiconductor device and semiconductor device manufactured by the use of such a method.
The invention describes a method of contacting narrow regions, such as narrow polysilicon gates of a CCD having a width of, for example, 4 .mu.m. Poly 2 and poly 3 layers, which are required already for the other CCD phases, are used as etching masks having two contact openings of 4 .mu.m which are displaced both with respect to each other and with respect to the region to be contacted, so that it is possible to define a contact opening which is smaller than 4 .mu.m and is aligned accurately above the gate to be contacted. FIG. 4.

REFERENCES:
patent: 3943543 (1976-03-01), Caywood
patent: 3961352 (1976-06-01), Colton et al.
patent: 4262297 (1981-04-01), Patridge
patent: 4306353 (1981-01-01), Jacobs et al.
Beck, G. A. et al., "High Density Frame Transfer Image Sensor", Proc. of the 14th Conf. (1982 Int'l.) on Solid State Devices, Tokyo, 1982, Jap. J. App. Phys., vol. 22 (1983), Supp. 22-1, pp. 109-112.

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