Integrated circuit having field effect transistors

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307443, 307475, 307491, 307565, H03K 19003, H03K 19094

Patent

active

051071444

ABSTRACT:
An integrated circuit includes a logical part and a buffer part. A voltage clamping circuit is provided in parallel with a driver transistor of the logical part of the integrated circuit. The high level of the internal logical circuit is linked to the voltage of a first source power supply that is supplied to the driver transistor. A plurality of diodes may be used, connected in parallel as the voltage clamping circuit. A voltage clamping circuit may be formed alternatively by using a plurality of field transistors, each of the transistors using the gate as an anode and the short-circuited source and drain as a cathode, and the anode and the cathode are connected in series. An input buffer circuit of differential type configuration is used, and by inputting the voltage of a first source power supply to a reference voltage part of the input buffer circuit, the level conversion of an input voltage is made to be linked to variations of the voltage of the source power supply.

REFERENCES:
patent: 4410815 (1983-10-01), Ransom et al.
patent: 4450369 (1984-05-01), Schuermeyer
patent: 4929852 (1990-05-01), Bae
patent: 4945258 (1990-07-01), Picard et al.

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