Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-12-11
2007-12-11
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C363S020000
Reexamination Certificate
active
10902233
ABSTRACT:
A technique includes forming a first well in a substrate and forming a second well in the substrate. The first well is electrically isolated from the second well. The technique includes forming an element in the second well to limit current between the first well and the substrate.
REFERENCES:
patent: 6914791 (2005-07-01), Park et al.
patent: 2004/0079999 (2004-04-01), Shibata et al.
patent: WO-02052649 (2002-04-01), None
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