Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-11-14
1998-12-08
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257752, 257758, 257760, 257763, 257774, H01L 2348, H01L 2352, H01L 2940
Patent
active
058474625
ABSTRACT:
An interconnect structure is provided having a conductor with enhanced thickness. The conductor includes an upper portion and a lower portion, wherein the lower portion geometry is sufficient to increase the current-carrying capacity beyond that provided by the upper portion. The lower portion is formed by filling a trench within an upper dielectric region, and the upper portion is formed by selectively removing a conductive material from the upper dielectric surface except for regions directly above the lower portion. The upper and lower portions thereby form a conductor of enhanced cross-section which can be produced by modifying a via-etch mask, rather than having to reconfigure and/or move interconnect features formed by a metal mask.
REFERENCES:
patent: 5034799 (1991-07-01), Tomita et al.
patent: 5189506 (1993-02-01), Cronin et al.
patent: 5451804 (1995-09-01), Lur et al.
patent: 5596230 (1997-01-01), Hong
Bandyopadhyay Basab
Brennan William S.
Dawson Robert
Fulford Jr. H. Jim
Hause Fred N.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Kowert Robert C.
Mintel William
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