Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2007-01-16
2011-11-22
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S285000, C257S328000, C257S329000, C257S330000, C257S331000, C257S332000, C257S333000, C257S334000, C257S335000, C257S339000, C257S341000, C257S342000
Reexamination Certificate
active
08063419
ABSTRACT:
An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is disclosed.
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patent: 10245049 (2004-04-01), None
patent: 103 09 400 (2004-09-01), None
Machine translation of DE 10245049 A1.
Human translation of DE 10245049 A1 (Tihanyi '049).
Machine translation of DE 10147307 A1 (Tihanyi '307).
Chinese Office Action for Chinese Patent Application 200710087979.0 issued Jun. 13, 2008 (9 pages).
Kapels Holger
Willmeroth Armin
Dicke Billig & Czaja, PLLC
Infineon Technologies Austria AG
Jung Michael
Richards N Drew
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