Integrated circuit having bipolar transistors and method of manu

Details Integrated circuit having bipolar transistors and method of manu Integrated circuit having bipolar transistors and method of manu

1974-12-20

1976-06-01

James, Andrew J.

Metal treatment

Stock

Ferrous

357 20, 357 34, 357 44, 357 48, 148175, H01L 2702

Patent

active

039613402

ABSTRACT:
Method of producing integrated circuit including bipolar transistors, comprising the steps of forming collector zone of a first transistor at least partly by diffusing an impurity from a substrate part that is, before the growth of a first epitaxial layer on the substrate, doped at least locally with the impurity, forming the first epitaxial layer, and forming the collector zone of a second transistor by diffusing an impurity in the first epitaxial layer prior to growing a second epitaxial layer. Also, an integrated circuit produced by this method.

REFERENCES:
patent: 3566218 (1971-02-01), Widlar et al.
patent: 3582725 (1971-06-01), Matukura et al.
patent: 3596115 (1971-07-01), Conzelmann et al.
patent: 3607465 (1971-09-01), Frouin
patent: 3723200 (1973-03-01), Castrucci et al.
patent: 3725145 (1973-04-01), Maki
patent: 3767486 (1973-10-01), Imaizumi
patent: 3885998 (1975-05-01), Reindl

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