Integrated circuit having an insulated memory

Details Integrated circuit having an insulated memory Integrated circuit having an insulated memory

2005-10-27

2009-11-10

Chen, Jack (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257SE21003

Reexamination Certificate

active

07615770

ABSTRACT:
A memory cell includes a first electrode, a second electrode, and phase-change material between the first electrode and the second electrode. The phase-change material defines a narrow region. The memory cell includes first insulation material having a first thermal conductivity and contacting the phase-change material. A maximum thickness of the first insulation material contacts the narrow region. The memory cell includes a second insulation material having a second thermal conductivity greater than the first thermal conductivity and contacting the first insulation material.

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