Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-07-12
2011-07-12
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S334000, C257S751000, C257S774000, C257SE23145
Reexamination Certificate
active
07977798
ABSTRACT:
An integrated circuit having a semiconductor substrate with a barrier layer is disclosed. The arrangement includes a semiconductor substrate and a metallic element. A carbon-based barrier layer is disposed between the semiconductor substrate and the metallic element.
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Binder Florian
Dertinger Stephan
Hasler Barbara
Martin Alfred
Sommer Grit
Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Parekh Nitin
Qimonda AG
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