Integrated circuit having a memory cell

Details Integrated circuit having a memory cell Integrated circuit having a memory cell

2006-03-14

2008-09-09

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185230, C365S185260, C365S100000, C365S225700

Reexamination Certificate

active

07423906

ABSTRACT:
A memory cell having a programmable solid state electrolyte layer, a writing line and a controllable switch that is arranged between the solid state electrolyte layer and the writing line. The controllable switch has a control input that is connected with a selecting line and the switch also has a limiting element that limits a current through the solid state electrolyte layer to a predetermined amount of electric charge for a write operation.

REFERENCES:
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M. Kozicki et al., Non-Volatile Memory Based on Solid Electrolytes, Proceedings Non-Volatile Memory Technology Symposium (2004).
S. Blaineau et al., “Physical Properties of a GeS2 glass using approximateab initiaomolecular dynamics”, Physical Review B, vol. 67-9 (2003) 94204.
R. Symanczyk et al.,Electrical Characterization of Solid State Ionic Memory Elements, Proceedings of the Non-Volatile Memory Technology Symposium, 17-1, San Diego, CA (2003).
S. Kaeriyama, et al., A Nonvolatile Programmable Solid-Electrolyte Nanometer Switch, IEEE Journal of Solid-State Circuits, vol. 40, No. 1, Jan. 2005, pp. 168-176.
J. Hyde, et al., A Floating-Gate Trimmed, 14-bit, 250 Ms/s Digital-to-Analog Converter in Standard 0.25micron CMOS, 2002 Symposium on VLSI Circuits Digest of Technical Papers, 2002, pp. 328-331.
German Patent Office Examination Report dated Dec. 11, 2006.

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