Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2011-03-08
2011-03-08
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C438S003000
Reexamination Certificate
active
07902616
ABSTRACT:
An integrated circuit having a magnetic tunnel junction and method. One embodiment provides an integrated circuit having a magnetic tunnel junction is provided. The magnetic tunnel junction includes a barrier layer. The barrier layer includes carbon, pyrolytic carbon, or graphene, or graphite.
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Klostermann Ulrich
Kreupl Franz
Dicke Billig & Czaja, PLLC
Le Thao P.
Qimonda AG
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