Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Patent
1991-04-23
1993-04-06
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
257593, 257558, 257592, H01L 2972, H01L 2906, H01L 2348
Patent
active
052008037
ABSTRACT:
An integrated circuit includes a lateral transistor which has emitter regions (7) and collector regions (8) of a first conductivity type laterally spaced apart and included in a region (4, 5) of a second conductivity type opposed to the first. The lateral space (4) of the region (4, 5) of the second type situated between the emitter (7) and collector (8) regions forms the base of the transistor, with the emitter region (7) having a depth and a doping level which are such that the diffusion length of the minority carriers injected vertically therein is greater than or equal to the width of the region, which region has an elongate shape in at least a longitudinal direction, while the lateral transistor has its contour surrounded by a deep insulating layer (12). The collector (8) has at least two zones, between which is disposed an elongate portion (7) of the emitter region, with an additional region (9) of the first conductivity type adjoining the contour of the transistor and disposed between the contour of the transistor and the deep insulating layer (12) at least opposite to the ends (7') of the elongate portion of the emitter region.
REFERENCES:
patent: 4684877 (1987-09-01), Shreve et al.
patent: 4951108 (1990-09-01), Leduc
Berger et al; "Current Gain In Injection Transistor Structures"; May 1975; IBM Technical Disclosure Bulletin vol. 17. No. 12.
Biren Steven R.
Fahmy Wael
Hille Rolf
U.S. Philips Corp.
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