Integrated circuit having a gate oxide

Details Integrated circuit having a gate oxide Integrated circuit having a gate oxide

1996-11-07

1997-08-05

DeBoer, Todd

Electricity: electrical systems and devices

Safety and protection of systems and devices

Transient responsive

361 56, 361 91, 324765, H02H 904

Patent

active

056548630

ABSTRACT:
An integrated circuit having a gate oxide, preferably for a DMOS circuit having a protective device against electrostatic overvoltages (ESD), is to connect a limiting circuit in series with the protective device. This series circuit means that, during the wafer production, an increased voltage can be applied to the gate of the integrated circuit, for testing the gate oxide, without the circuit being limited to a lower value. After testing, the limiting circuit is connected irreversibly in its low-resistance state, with the result that subsequent ESD interference voltages are limited by the built-in protective device. A zener zapping diode is provided as the limiting circuit. An advantageous result of the arrangement is the fact that an additional bonding connection for connecting the gate connection to the protective device is no longer necessary.

REFERENCES:
patent: 4412241 (1983-10-01), Nelson
patent: 4809122 (1989-02-01), Fitzner
patent: 4949211 (1990-08-01), Edwards
patent: 5341267 (1994-08-01), Whitten et al.
patent: 5502399 (1996-03-01), Imai

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