Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-03-15
2005-03-15
Smith, Matthew (Department: 2825)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S751000, C257S758000, C257S347000, C257S349000, C438S406000, C438S393000, C438S355000, C438S458000
Reexamination Certificate
active
06867495
ABSTRACT:
Integrated circuits, semiconductor devices and methods for making the same are described. Each embodiment shows a diffused, doped backside layer in a device wafer that is oxide bonded to a handle wafer. The diffused layer may originate in the device handle, in the handle wafer, in the bond oxide or in an additional semiconductor layer of polysilicon or epitaxial silicon. The methods use a thermal bond oxide or a combination of a thermal and deposited oxide.
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Joseph A. Czagas et al, “Method for Making a Diffused Back-Side Payer on a Bonded-Wafer with a Thick Bond Oxide”, pp. 1-13, Mar. 2, 1999.
Beasom James D.
Czagas Joseph A.
Woodbury Dustin A.
Fogg and Associates LLC
Lundberg Scott V.
Luu Chuong A
Smith Matthew
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