Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2005-09-20
2005-09-20
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S542000
Reexamination Certificate
active
06946364
ABSTRACT:
Integrated circuits, semiconductor devices and methods for making the same are described. Each embodiment shows a diffused, doped backside layer in a device wafer that is oxide bonded to a handle wafer. The diffused layer may originate in the device handle, in the handle wafer, in the bond oxide or in an additional semiconductor layer of polysilicon or epitaxial silicon. The methods use a thermal bond oxide or a combination of a thermal and deposited oxide.
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Joseph A. Czagas et al, “Method for Making a Diffused Back-Side Payer on a Bonded-Wafer with a Thick Bond Oxide”, pp. 1-13, Mar. 2, 1999.
Beasom James D.
Czagas Joseph A.
Woodbury Dustin A.
Geyer Scott B.
Intersil America's Inc.
Lebentritt Michael
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