Integrated circuit having a device wafer with a diffused...

Details Integrated circuit having a device wafer with a diffused... Integrated circuit having a device wafer with a diffused...

2005-09-20

2005-09-20

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S542000

Reexamination Certificate

active

06946364

ABSTRACT:
Integrated circuits, semiconductor devices and methods for making the same are described. Each embodiment shows a diffused, doped backside layer in a device wafer that is oxide bonded to a handle wafer. The diffused layer may originate in the device handle, in the handle wafer, in the bond oxide or in an additional semiconductor layer of polysilicon or epitaxial silicon. The methods use a thermal bond oxide or a combination of a thermal and deposited oxide.

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Joseph A. Czagas et al, “Method for Making a Diffused Back-Side Payer on a Bonded-Wafer with a Thick Bond Oxide”, pp. 1-13, Mar. 2, 1999.

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