Integrated circuit having a charge coupled device and MOS transi

Details Integrated circuit having a charge coupled device and MOS transi Integrated circuit having a charge coupled device and MOS transi

1992-03-03

1994-06-14

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257250, 257369, 257640, H01L 2978, H01L 2934

Patent

active

053212827

ABSTRACT:
An integrated circuit comprises a charge coupled device and an MOS transistor. The charge coupled device has a lower and an upper gate electrode on the substrate. The insulating film between the substrate and the electrodes comprises silicon nitride. The insulating film between the electrodes is formed by thermal oxidizing the lower gate electrode using the silicon nitride film as a mask.

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patent: 4994888 (1991-02-01), Taguchi
patent: 5189499 (1993-02-01), Izumi et al.

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