Patent
1976-09-20
1977-12-20
James, Andrew J.
357 50, 357 51, 357 91, H01L 2702, H01L 2704, H01L 2712
Patent
active
040645274
ABSTRACT:
A buried load device in an integrated circuit extends between two regions of like conductivity isolated from each other by thick oxide and substrate comprises a channel beneath the oxide and having dimensions defined by a diffused region of opposite conductivity type. The buried channel is formed by impurity migration from an upper epitaxial layer that is oxidized to separate two regions and the connecting channel width is defined by diffused strip regions of opposite conductivity to establish a desired current-voltage relationship thereof.
REFERENCES:
patent: 3566219 (1971-02-01), Nelson
patent: 3725136 (1973-04-01), Morgan
patent: 3880675 (1975-04-01), Tarui et al.
patent: 3901737 (1975-08-01), Dash
Hendricson Alvin E.
Intersil, Inc.
James Andrew J.
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