Integrated circuit for sensing an environmental condition and pr

Miscellaneous active electrical nonlinear devices – circuits – and – External effect – Temperature

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327513, 327564, 327565, 327108, H01L 3500, H01L 2500, H03K 300

Patent

active

054932483

ABSTRACT:
An environmental sensor integrated with high current drive device is provided. An environmental sensor is fabricated on a semiconductor substrate using conventional MOS process used for N-well CMOS logic and DMOS power transistors. An N-well is preferably used as a junction etch stop for micromachining of mechanical sensor components. A high voltage P-type region is used to electrically isolate the high current device from the sensor device. By locating the sensor device away from the high current drive device on a common semiconductor substrate, good performance can be achieved from the sensor even while the high current device dissipates a large amount of power.

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