Integrated circuit for level shift

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307475, 307279, 307290, 307585, 307576, 307579, 307451, 365226, 365228, H03K 1710, H03K 1716, H03K 17687, H03K 3356

Patent

active

049964437

ABSTRACT:
An integrated circuit for level shift is a parallel-connected circuit comprised of a first circuit including a first MOS FET of one conductive type, a third MOS FET of another conductive type and a first MOS FET of the other conductive type which are series-connected in this order and a second circuit including a second MOS FET of the one conductive type, a fourth MOS FET of the other conductive type and a second MOS FET of the other conductive type which are series-connected in this order, wherein gates of the first and second MOS FETs of the one conductive type are connected respectively to the output side and input side of an inverter connected to a low voltage electric power source, gates of the third and fourth MOS FETs of the other conductive type both are connected to a reference voltage source, a gate of the first MOS FET of the other conductive type is connected to a common junction point of the fourth MOS FET and the second MOS FET of the other conductive type, a gate of the second MOS FET of the other conductive type is connected to a common junction point of the third MOS FET and the first MOS FET of the other conductive type, and the parallel-connected circuit is connected to a high voltage electric power source.

REFERENCES:
patent: 4409677 (1983-10-01), Takemae et al.
patent: 4656374 (1987-04-01), Rapp
patent: 4663701 (1987-05-01), Stotts
patent: 4695744 (1987-09-01), Giordano
patent: 4801819 (1989-01-01), Theus et al.
patent: 4845381 (1989-07-01), Cuevas
patent: 4871933 (1989-10-01), Galbraith
patent: 4871978 (1989-10-01), Galbraith

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