Integrated circuit feature layout for improved chemical...

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S204000

Reexamination Certificate

active

06982476

ABSTRACT:
The present invention is a level of an integrated circuit. The level of integrated circuit has a first area having a plurality of features having a first density and the level of the integrated circuit has a second area adjacent to the first area wherein the second area has a plurality of dummy features having a density substantially similar to the first density.

REFERENCES:
patent: 4278897 (1981-07-01), Ohno et al.
patent: 4489478 (1984-12-01), Sakurai
patent: 4500905 (1985-02-01), Shibata
patent: 4711701 (1987-12-01), McLevige
patent: 4904886 (1990-02-01), Tanahashi
patent: 4916514 (1990-04-01), Nowak
patent: 4949162 (1990-08-01), Tamaki et al.
patent: 4963501 (1990-10-01), Ryan et al.
patent: 4973562 (1990-11-01), Den Blanken
patent: 5032890 (1991-07-01), Ushiku et al.
patent: 5132237 (1992-07-01), Matthews
patent: 5278105 (1994-01-01), Eden et al.
patent: 5733798 (1998-03-01), Michael et al.
patent: 5745407 (1998-04-01), Levy et al.
patent: 5789120 (1998-08-01), Jang et al.
patent: 5885856 (1999-03-01), Gilbert et al.
patent: 5981384 (1999-11-01), Juengling
patent: 6171976 (2001-01-01), Cheng
patent: 6222213 (2001-04-01), Fujiwara
patent: 6232231 (2001-05-01), Sethuraman et al.
patent: 6396158 (2002-05-01), Travis et al.
patent: 2003/0107055 (2003-06-01), Watanabe et al.
patent: 0073486 (1982-08-01), None
patent: 0395886 (1990-03-01), None
patent: 411251531 (1998-12-01), None
Yoichi Akasaka “Three Dimensional Integrated Circuit: Technology and Application Prospect”, Microelectronics Journal, vol. 20, Nos 1-2, 1989.
Yoichi Akasaka “Three Dimensional IC Trends”, Proceedings of the IEEE, vol. 74, No. 12, Dec. 1986.
“Exotic Memories Diverse Approaches” EDN Asia Magazine, Sep. 2001.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated circuit feature layout for improved chemical... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit feature layout for improved chemical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit feature layout for improved chemical... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3591008

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.