Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2006-01-03
2006-01-03
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257S204000
Reexamination Certificate
active
06982476
ABSTRACT:
The present invention is a level of an integrated circuit. The level of integrated circuit has a first area having a plurality of features having a first density and the level of the integrated circuit has a second area adjacent to the first area wherein the second area has a plurality of dummy features having a density substantially similar to the first density.
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Cleeves James M.
Vyvoda Michael A.
Matrix Semiconductor
Ngo Ngan V.
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