Integrated circuit fabrication with a raised feature as mask

Details Integrated circuit fabrication with a raised feature as mask Integrated circuit fabrication with a raised feature as mask

1993-11-05

1995-08-08

Quach, T. N.

Fishing, trapping, and vermin destroying

437228, H01L 21283, H01L 21316

Patent

active

054398479

ABSTRACT:
A method for etching metal conductors and stacks of conductors is disclosed. A doped silicon dioxide layer is deposited upon a metal or stack of conductive layers to be etched. A silicon dioxide layer is doped with phosphorous. Next, the silicon dioxide layer is partially etched and the photoresist removed. Subsequent etching utilizes the raised feature created in the silicon dioxide layer as a mask to etch the underlying metal or stack of conductors.

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