Fishing – trapping – and vermin destroying
Patent
1990-12-06
1992-08-04
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
148DIG1, H01L 2120
Patent
active
051358867
ABSTRACT:
A process for the formation of material layers such as amorphous silicon is disclosed. When a precursor gas such as silane is utilized to form amorphous silicon, silicon crystals are often formed on top of the amorphous silicon layer. The crystals are created by the presence of low pressure silane in the reactor at the end of the deposition cycle. Formation of crystals is inhibited by lowering the temperature before silane flow is terminated.
REFERENCES:
patent: 4317844 (1982-03-01), Carlson
J. Electrochem. Soc.: Solid State Science and Technology, Oct. 1987, pp. 2541-2545, "The Effect of Low Pressure on the Structure of LPCVD Polycrystalline Silicon Films," P. Joubert et al.
Manocha Ajit S.
Nanda Arun K.
Rana Virendra V. S.
AT&T Bell Laboratories
Chaudhuri Olik
Fourson G.
Rehberg John T.
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