Integrated circuit fabrication using a metal silicide having a s

Details Integrated circuit fabrication using a metal silicide having a s Integrated circuit fabrication using a metal silicide having a s

1995-01-17

1996-08-27

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437192, 437247, 148DIG169, H01L 2144, H01L 2148

Patent

active

055500846

ABSTRACT:
An improved method is provided for fabricating a metal silicide upon a semiconductor substrate. The method advantageously places a film of metal nitride upon the metal layer. The metal nitride layer and metal layer are sputter deposited within the same chamber without removing the substrate from the vacuum so as to prevent oxygen or moisture from contaminating the metal layer and causing oxides to form thereon. Furthermore, the metal nitride layer is reactively sputter deposited in a nitrogen/argon ambient to allow precise amounts of nitrogen to be deposited across uneven surface topography directly adjacent to the underlying metal layer. Excess nitrogen purposefully deposited within the metal nitride layer consumes a controlled depth of metal bond sites within the underlying metal layer so as to limit the amount of silicidation from underlying silicon or polysilicon into the metal thereby substantially eliminating or minimizing silicide shorting problems.

REFERENCES:
patent: 4998157 (1991-03-01), Yokoyama et al.
patent: 5043300 (1991-08-01), Nulman
patent: 5242860 (1993-09-01), Nulman
patent: 5278099 (1994-01-01), Maeda
Miller, "Titanium Silicide Formation by RTA: Device Implications", 1st International RTP Conference, (RTP, 1993) Sep. 8-10, 1993, pp. 156-159.
Wolf, Silicon processing for VLSI ERA, vol. 2 pp. 132-133 anid 166-167.

Affiliated with

Also associated with

Rating

Integrated circuit fabrication using a metal silicide having a s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit fabrication using a metal silicide having a s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit fabrication using a metal silicide having a s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1056096