Integrated circuit fabrication process for forming a bipolar tra

Details Integrated circuit fabrication process for forming a bipolar tra Integrated circuit fabrication process for forming a bipolar tra

1985-11-01

1987-06-02

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 148 15, 148187, 148DIG10, 357 34, H01L 21265, H01L 21203, H01L 2702

Patent

active

046691790

ABSTRACT:
An integrated circuit bipolar transistor fabrication technique is disclosed. The process includes steps to form shallow, self-aligned, heavily doped, extrinsic base regions which do not encroach substantially upon the emitter region. The process allows for construction of transistors which require a thinner epitaxial layer or, in the alternative, i.e., with a typical epitaxial layer, have a higher collector-to-base breakdown voltage.

REFERENCES:
patent: 4111726 (1978-09-01), Chen
patent: 4433471 (1984-02-01), Ko et al.
patent: 4443933 (1984-04-01), de Brebisson
patent: 4481706 (1984-11-01), Roche
patent: 4484211 (1984-11-01), Takemoto et al.
patent: 4573256 (1986-03-01), Lechaton et al.
patent: 4574469 (1986-03-01), Mastroianni et al.

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