Integrated circuit fabrication process

Metal working – Method of mechanical manufacture – Electrical device making

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29571, 29577C, 29590, 357 68, 156643, 427 93, H01L 21283

Patent

active

046567321

ABSTRACT:
Integrated circuits wherein the width of contacts is narrowed by a sidewall oxide, so that the metal layer can be patterned to minimum geometry everywhere, and does not have to be widened where it runs over a contact.

REFERENCES:
patent: 4045594 (1977-08-01), Maddocks
patent: 4488162 (1984-12-01), Jambotkar
patent: 4489481 (1984-12-01), Jones
patent: 4507853 (1985-04-01), McDavid
Murarka, "Refractory Silicides for Integrated Circuits", J. Vac. Sci. Tech., 17(4), Jul./Aug. 1980.
Ghondi, VLSI Fabrication Principles, John Wiley & Sons, New York, 1983.

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