Integrated circuit fabrication method utilizing selective etchin

Details Integrated circuit fabrication method utilizing selective etchin Integrated circuit fabrication method utilizing selective etchin

1984-06-15

1985-12-31

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29580, 148 15, 148DIG85, 148DIG86, 148DIG117, 156643, 357 49, 357 50, H01L 21302, H01L 2176

Patent

active

045611726

ABSTRACT:
A sidewall-nitride isolation technology refines process control over lateral oxide encroachment by preventing any thinning of the nitride moat-masking layer during the nitride etch step which clears the sidewall nitride layer from the bottom of the etched recesses in silicon. This is done by initially patterning the moat regions in an oxide
itride/oxide stack, rather than the nitride/oxide stack of the prior art.

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patent: 4219369 (1980-08-01), Ogiue et al.
patent: 4271583 (1981-06-01), Kahng et al.
patent: 4292156 (1981-09-01), Matsumoto et al.
patent: 4361600 (1982-11-01), Brown

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