Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-03-03
1999-09-21
Utech, Benjamin
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438729, H01L 2100
Patent
active
059553812
ABSTRACT:
The quartz shadow ring of a conventional plasma etching apparatus is desirably coated with material which inhibits the liberation of oxygen into the plasma. Investigation has shown that the liberated oxygen degrades etching uniformity across the wafer.
REFERENCES:
patent: 4754009 (1988-06-01), Squire
patent: 5476548 (1995-12-01), Lei et al.
patent: 5494523 (1996-02-01), Steger et al.
patent: 5578164 (1996-11-01), Kurono et al.
Bitting Donald Stephen
Esry Thomas Craig
Huibregtse David
Wheeler Paul Edward
Grillo Anthony
Lucent Technologies - Inc.
Umez-Eronini Lynette T.
Utech Benjamin
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